Umphezulu ozinzileyo weMount PAR® Transient Voltage Suppressors (TVS) DO-218AB SM8S
Izinto ezilungileyo ze-DO-218AB SM8S:
1. Ngenxa yetekhnoloji ye-Chemical Etching Method, iziphumo ezibi zeendlela zokusika ngokuthe ngqo zipheliswa.
2. Inamandla kwi-reverse surge ngenxa ye-chip enkulu kunezinye.
3. Izinga lokungaphumeleli eliphantsi kakhulu kwimozulu eyahlukeneyo kunye neendawo
4. Ivunywe ngumgangatho we-AEC-Q101
5. Imisebenzi yeDiode iphuculwe, ixhamla kukhuseleko lwezesayensi kwi-PN junction.
IIMPAWU EZIYINTLOKO:
VBR: 11.1 V ukuya ku-52,8 V
I-VWM: 10 V ukuya ku-43 V
I-PPPM (10 x 1000 μs): 6600 W
I-PPPM (10 x 10 000 μs): 5200 W
PD: 8W
I-IFSM: 700 A
TJ ubuninzi.: 175 °C
I-Polarity: I-uni-directional
Iphakheji: DO-218AB
Iinkqubo zeMveliso yeChip
1. Ushicilelo oluzenzekelayo(Ushicilelo olusicaba oluzenzekelayo oluchanekileyo)
2. I-Automatic First-etching(IsiXhobo sokuQhaka ngokuzenzekela,CPK>1.67)
3. Uvavanyo lwePolarity oluzenzekelayo (uVavanyo oluchanekileyo lwePolarity)
4. INdibano ezenzekelayo (iNdibano eZiphuhlisileyo echanekileyo)
5. I-Soldering (Ukukhuselwa ngoMxube weNitrojeni kunye neHydrogen
Ukutywinwa kweVacuum )
6. I-automatic Second-etching (I-Automatic Second-etching with Ultra-pure Water)
7. I-Automatic Gluing (i-Gluing efanayo kunye nokubala okuchanekileyo kuyafezekiswa nge-Automatic Precise Gluing Equipment)
8. Uvavanyo oluzenzekelayo lwe-Thermal (Ukhetho oluzenzekelayo nguMvavanyi we-Thermal)
9. Uvavanyo oluzenzekelayo (umvavanyi onemisebenzi emininzi)