I-High Thermal Conductivity DPAK (TO-252AA) i-SiC Diode

High Thermal Conductivity DPAK (TO-252AA) SiC Diode Featured Image

Inkcazelo emfutshane:

Ulwakhiwo lokuPakisha: DPAK (TO-252AA)

Intshayelelo: I-YUNYI DPAK (TO-252AA) i-SiC Diode, eyenziwe kwizinto ze-silicon carbide, inomgangatho ophezulu we-thermal conductivity kunye nekhono elinamandla lokudlulisa ubushushu, ilungele ngakumbi ekuphuculeni ukuxinana kwamandla esixhobo samandla, ngoko ifaneleka ngakumbi ukusebenza kwindawo yobushushu obuphezulu.Amandla omgangatho ophezulu we-SiC diode wonyusa amandla ombane kunye nokunciphisa ubungakanani, kwaye amandla ombane aphezulu wokuqhekeka kwe-elektroniki anyusa umbane wokuqhekeka kwezixhobo zamandla ze-semiconductor.Kwangaxeshanye, ngenxa yokwanda kwamandla entsimi yokuqhekeka kwe-electron, kwimeko yokwandisa ukuxinana kokungena kokungcola, ibroadband yendawo yokukhukuliseka yesixhobo samandla e-SiC diode inokuncipha, ukuze ubukhulu besixhobo samandla. inokuncitshiswa.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Ixesha lokuphendula esweni

Uluhlu lokulinganisa

Iithegi zeMveliso

Izinto eziluncedo ze-YUNYI's DPAK (TO-252AA) SiC Diode:

1. Iindleko zokukhuphisana nomgangatho ophezulu

2. Ukusebenza okuphezulu kwemveliso kunye nexesha elifutshane lokuhamba

3. Ubungakanani obuncinci, kunceda ukulungelelanisa indawo yebhodi yesiphaluka

4. Izinzile kwaye inokwethenjelwa phantsi kweendawo ezahlukeneyo zendalo

5. Ukuziphuhlisa i-chip yelahleko ephantsi

Iinkqubo zokwenziwa kweChip:

1. Ushicilelo ngoomatshini (Ushicilelo oluluqilima oluchanekileyo oluzenzekelayo)

2. Ukufakwa kokuQala okuzenzekelayo (IziXhobo zokuziQingela ngokuzenzekela, CPK>1.67)

3. Uvavanyo lwePolarity oluzenzekelayo (uVavanyo oluchanekileyo lwePolarity)

4. INdibano ezenzekelayo (iNdibano eZiphuhlisileyo echanekileyo)

5. Ukufakwa kweSoldering (Ukukhuselwa ngoMxube weNitrogen kunye neHydrogen Vacuum Soldering)

6. I-automatic Second-etching (I-Automatic Second-etching with Ultra-pure Water)

7. I-Automatic Gluing (i-Uniform Gluing & Calcuse Calculation iQinisekiswa yi-Automatic Precise Gluing Equipment)

8. Uvavanyo oluzenzekelayo lwe-Thermal (Ukhetho oluzenzekelayo nguMvavanyi we-Thermal)

9. Uvavanyo oluzenzekelayo (umvavanyi onemisebenzi emininzi)

Iiparamitha zeemveliso:

Inombolo yendawo	Iphakheji	VRWM V	IO A	IFZM A	IR mna	V_F V
I-ZICRD5650	DPAK	650	5	60	60	2
I-ZICRD6650	DPAK	650	6	60	50	2
Z3D06065E	DPAK	650	6	70	3(0.03 eqhelekileyo)	1.7(1.5 eqhelekileyo)
I-ZICRD10650CT	DPAK	650	10	60	60	1.7
I-ZICRD10650	DPAK	650	10	110	100	1.7
I-ZICRD101200	DPAK	1200	10	110	100	1.8
I-ZICRD12600	DPAK	600	12	50	150	1.7
I-ZICRD12650	DPAK	650	12	50	150	1.7
Z3D03065E	DPAK	650	3	46	2(0.03 eqhelekileyo)	1.7(1.4 eqhelekileyo)
Z3D10065E	DPAK	650	10	115	40(0.7 eqhelekileyo)	1.7(1.45 eqhelekileyo)
Z4D04120E	DPAK	1200	4	46	200(20 eqhelekileyo)	1.8(1.5 eqhelekileyo)
Z4D05120E	DPAK	1200	5	46	200(20 eqhelekileyo)	1.8(1.65 eqhelekileyo)
Z4D02120E	DPAK	1200	2	44	50(10 eqhelekileyo)	1.8(1.5 eqhelekileyo)
I-Z4D10120E	DPAK	1200	10	105	200(30 eqhelekileyo)	1.8(1.5 eqhelekileyo)
Z4D08120E	DPAK	1200	8	64	200(35 eqhelekileyo)	1.8(1.6 eqhelekileyo)
Z3D10065E2	DPAK	650	10	70(umlenze ngamnye)	8(0.002 eqhelekileyo)(umlenze ngamnye)	1.7(1.5 eqhelekileyo)(umlenze ngamnye)